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2pcs 850nm 1000mW 1W Infrared 5.6mm TO18 Laser Diode Powerful IR AlGaAs Semiconductor LD
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$ 39.76
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2pcs 850nm 1000mW IR 5.6mm TO18 Laser Diode Features: . Wavelength: 850nm (±5nm) Output power: 1W Threshold current: <600mA Forward current: <1400mA Forward voltage: 1.9V-2.2V Details: 850nm AlGaAs quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. It is CW multi-mode injection semiconductor laser available on C-mount, B-mount and Q-mount. It’s suitable for application in various opto-electronic systems. Package: 2x 850nm 1W 5.6mm Laser Diode
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